SiHU5N50D
www.vishay.com
Vishay Siliconix
R G
V GS
V DS
R D
D.U.T.
+
- V DD
10 V
Q GS
Q G
Q GD
10 V
V G
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
V DS
90 %
12 V
Same type as D.U.T.
50 k Ω
0.2 μF
0.3 μF
+
10 %
D.U.T.
-
V DS
V GS
t d(on)
t r
t d(off) t f
V GS
3 mA
Fig. 13 - Switching Time Waveforms
I G
I D
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
Vary t p to obtain
required I AS
V DS
R G
D.U.T
I AS
+
-
V DD
10 V
t p
0.01 Ω
Fig. 14 - Unclamped Inductive Test Circuit
V DS
t p
V DD
V DS
I AS
Fig. 15 - Unclamped Inductive Waveforms
S12-0690-Rev. A, 02-Apr-12
5
Document Number: 91492
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIJ400DP-T1-GE3 MOSFET N-CH 30V PPAK SO-8L
SIJ458DP-T1-GE3 MOSFET N-CH 30V 8-SOIC
SIJ482DP-T1-GE3 MOSFET N-CH 80V 60A SO-8
SIJ800DP-T1-GE3 MOSFET N-CH 40V PPAK SO-8L
SIM-012SBT87 EMITTER IR SIDE VIEW SMD T/R
SIM-030ST LED IR 870NM 30MW SR SMD
SIM-20ST EMITTER IR 950NM SIDE VIEW TH
SIM-22STF EMITTER IR 950NM SIDE VIEW TH
相关代理商/技术参数
SiHU5N50D-GE3 功能描述:MOSFET 500V 5A 1.5Ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU6N62E-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel
SIHU7N60E 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SIHU7N60E-E3 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHU7N60E-GE3 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHUB-8 功能描述:电机驱动器 CONTROLLER RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA):
SiHW22N65E-GE3 功能描述:MOSFET 650V 180mOhms@10V 22A N-Ch E-SRS RoHS:否 制造商:Vishay / Siliconix 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:+/- 20 V 漏极连续电流:22 A 电阻汲极/源极 RDS(导通):0.18 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-247 AD 封装:Bulk
SIHW23N60E-GE3 功能描述:MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS RoHS:否 制造商:Vishay / Siliconix 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:20 V 漏极连续电流:23 A 电阻汲极/源极 RDS(导通):0.158 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-247AD-3 封装:Bulk